CY62148VN(2010) 查看數據表（PDF） - Cypress Semiconductor

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CY62148VN
(Rev.:2010)

4 Mbit (512K x 8) Static RAM

Cypress Semiconductor 

CY62148VN MoBL®

Figure 2. AC Test Loads and Waveforms

R1

VCC

OUTPUT

50 pF

INCLUDING

JIG AND

SCOPE

R2

VCC TYP

GND

10%

ALL INPUT PULSES

90%

90%

10%

Rise time: 1V/ns

Fall time: 1V/ns

Equivalent to:

THÉVENIN EQUIVALENT

Rth

OUTPUT

Vth

Parameters

R1

R2

RTH

VTH

3.0V

1105

1550

645

1.75V

Unit







V

Data Retention Characteristics

Over the Operating Range

Parameter

VDR

ICCDR

tCDR[3]

tR[4]

Description

Conditions

VCC for Data Retention

Data Retention Current

Chip Deselect to Data

Retention Time

VCC = 1.0V, CE > VCC 0.3V, VIN > VCC 0.3V or

VIN < 0.3V; No input may exceed VCC + 0.3V

Operation Recovery Time

Figure 3. Data Retention Waveform

Min.

1.0

Typ.[1]

0.2

Max.

3.6

5.5

Unit

V

A

0

ns

tRC

ns

DATA RETENTION MODE

VCC

1.0V

VDR > 1.0 V

1.0V

tCDR

tR

CE

Notes

3. Tested initially and after any design or process changes that may affect these parameters.

4. Full-device AC operation requires linear VCC ramp from VDR to VCC(min.) > 10 s or stable at VCC(min.) > 10 s.

Document Number : 001-55636 Rev. *A

Page 4 of 10

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