7C1325B-100 查看數據表（PDF） - Cypress Semiconductor

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7C1325B-100

256K x 18 Synchronous 3.3V Cache RAM

Cypress Semiconductor 

Timing Diagrams (continued)

Read/Write Cycle Timing

CY7C1325B

CLK

tCH

tCYC

tCL

ADD

tAS

A

ADSP

tADS

ADSC

tAH

B

tADS

C

D

tADH

tADH

ADV

tADVS

tADVH

CE1

CE

tCES

tCES

tCEH

tCEH

tWES

tWEH

WE

ADSP ignored

OE

with CE1 HIGH

tCLZ

Data

In/Out

tCDV

Q(A)

Q(B)

Q

Q

(B+1) (B+2)

Q

(B+3)

Q(B)

tEOHZ

D(C)

D

D

D

(C+1) (C+2) (C+3)

tDOH

tCHZ

Q(D)

Device originally

deselected

WE is the combination of BWE, BWS[1:0], and GW to define a write cycle (see Write Cycle Descriptions table).

CE is the combination of CE2 and CE3. All chip selects need to be active in order to select

the device. RAx stands for Read Address X, WAx stands for Write Address X, Dx stands for Data-in X,

Qx stands for Data-out X.

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