LHF32K10 查看數據表（PDF） - Sharp Electronics

零件编号

产品描述 (功能)

生产厂家

LHF32K10

Flash Memory 32M (4MB × 8 / 2M × 16)

Sharp Electronics 

sharp

LHF32K10

18

4.10 Block Erase Suspend Command

The Block Erase Suspend command allows block-

erase interruption to read or (multi) word/byte-write

data in another block of memory. Once the block-

erase process starts, writing the Block Erase

Suspend command requests that the WSM suspend

the block erase sequence at a predetermined point in

the algorithm. The device outputs status register data

when read after the Block Erase Suspend command

is written. Polling status register bits SR.7 and SR.6

can determine when the block erase operation has

been suspended (both will be set to "1"). STS will

also transition to High Z. Specification tWHRH2 defines

the block erase suspend latency.

At this point, a Read Array command can be written

to read data from blocks other than that which is

suspended. A (Multi) Word/Byte Write command

sequence can also be issued during erase suspend

to program data in other blocks. Using the (Multi)

Word/Byte Write Suspend command (see Section

4.11), a (multi) word/byte write operation can also be

suspended. During a (multi) word/byte write operation

with block erase suspended, status register bit SR.7

will return to "0" and the STS (if set to RY/BY#)

output will transition to VOL. However, SR.6 will

remain "1" to indicate block erase suspend status.

The only other valid commands while block erase is

suspended are Read Status Register and Block

Erase Resume. After a Block Erase Resume

command is written to the flash memory, the WSM

will continue the block erase process. Status register

bits SR.6 and SR.7 will automatically clear and STS

will return to VOL. After the Erase Resume command

is written, the device automatically outputs status

register data when read (see Figure 10). VPP must

remain at VPPH1 (the same VPP level used for block

erase) while block erase is suspended. RP# must

also remain at VIH. Block erase cannot resume until

(multi) word/byte write operations initiated during

block erase suspend have completed.

4.11 (Multi) Word/Byte Write Suspend

Command

The (Multi) Word/Byte Write Suspend command

allows (multi) word/byte write interruption to read data

in other flash memory locations. Once the (multi)

word/byte write process starts, writing the (Multi)

Word/Byte Write Suspend command requests that

the WSM suspend the (multi) word/byte write

sequence at a predetermined point in the algorithm.

The device continues to output status register data

when read after the (Multi) Word/Byte Write Suspend

command is written. Polling status register bits SR.7

and SR.2 can determine when the (multi) word/byte

write operation has been suspended (both will be set

to "1"). STS will also transition to High Z.

Specification tWHRH1 defines the (multi) word/byte

write suspend latency.

At this point, a Read Array command can be written

to read data from locations other than that which is

suspended. The only other valid commands while

(multi) word/byte write is suspended are Read Status

Register and (Multi) Word/Byte Write Resume. After

(Multi) Word/Byte Write Resume command is written

to the flash memory, the WSM will continue the

(multi) word/byte write process. Status register bits

SR.2 and SR.7 will automatically clear and STS will

return to VOL. After the (Multi) Word/Byte Write

command is written, the device automatically outputs

status register data when read (see Figure 11). VPP

must remain at VPPH1 (the same VPP level used for

(multi) word/byte write) while in (multi) word/byte

write suspend mode. WP# must also remain at VIH or

VIL.

Rev. 1.55

Share Link: