CY7C199CN(2011) 查看數據表（PDF） - Cypress Semiconductor

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CY7C199CN
(Rev.:2011)

256K (32K x 8) Static RAM

Cypress Semiconductor 

CY7C199CN

256 K (32 K × 8) Static RAM

Features

■ Fast access time: 15 ns and 20 ns

■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)

■ CMOS for optimum speed and power

■ TTL-compatible inputs and outputs

■ 2.0 V data retention

■ Low CMOS standby power

■ Automated power down when deselected

■ Available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and

28-pin DIP packages

General Description [1]

The CY7C199CN is a high performance CMOS Asynchronous

SRAM organized as 32K by 8 bits that supports an asynchronous

memory interface. The device features an automatic power

down feature that reduces power consumption when deselected.

See the “Truth Table” on page 4 in this data sheet for a complete

description of read and write modes.

The CY7C199CN is available in Pb-free 28-pin TSOP I, 28-pin

Molded SOJ and 28-pin DIP package(s).

Logic Block Diagram

Input Buffer

RAM Array

Column Decoder

Power

Down

Circuit

X

I/Ox

CE

WE

OE

A

X

Product Portfolio

–15

Maximum Access Time

15

Maximum Operating Current

80

Maximum CMOS Standby Current (low power)

500

–20

Unit

20

ns

75

mA

500

μA

Cypress Semiconductor Corporation • 198 Champion Court

Document #: 001-06435 Rev. *E

• San Jose, CA 95134-1709 • 408-943-2600

Revised March 17, 2011

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