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DAC1003D160 查看數據表(PDF) - NXP Semiconductors.

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DAC1003D160 Datasheet PDF : 19 Pages
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NXP Semiconductors
DAC1003D160
Dual 10 bits DAC, up to 160 MHz, 2 x interpolation
Table 5. Characteristics …continued
VCCD = VCCA = 3.0 V to 3.6 V; AGND and DGND connected together; Tamb = 40 °C to +85 °C; typical values measured at
VCCD = VCCA = 3.3 V, IO(fs) = 20 mA and Tamb = 25 °C; dynamic parameters measured using output schematic given in
Figure 10; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
In(o)
Eoffset
EG
GIQ
output noise current
offset error
gain error
IQ gain mismatch
relative to full-scale
relative to full-scale
between I and Q, relative to
full-scale
-
120
-
pA/Hz
-
0.3 -
%
5.4
-
+5.4
%
-
±0.2 -
%
SFDR
α2H
α3H
IMD2
IMD3
THD
NSD
S/N
ACPR
spurious free dynamic
range
fclk = 80 MHz; B = Nyquist
fo = 2.5 MHz at 0 dBFS
-
80
-
fo = 5 MHz at 0 dBFS
-
72
-
fo = 13 MHz at 0 dBFS
-
64
-
second harmonic level
fo = 5 MHz
-
73
-
fo = 13 MHz
-
65
-
third harmonic level
fo = 5 MHz
-
88
-
fo = 13 MHz
-
86
-
second-order
fclk = 80 MHZ; fo 1 = 10 MHz;
-
65
-
intermodulation distortion fo 2 = 12 MHz; B = Nyquist
third-order intermodulation fclk = 80 MHz; fo 1 = 10 MHz;
distortion
fo 2 = 12 MHz
-
84
-
total harmonic distortion fclk = 80 MHz; B = Nyquist; Tamb = 25 °C
fo = 2.5 MHz
-
75
-
fo = 5 MHz
68
71
-
noise spectral density
fclk = 80 MHz
fo = 2.5 MHz
-
155 -
fo = 5 MHz
-
155 -
fo = 19 MHz
-
153 -
signal-to-noise ratio
fclk = 80 Msample/s; B = Nyquist
fo = 2.5 MHz
-
80
-
fo = 5 MHz
70
80
-
fo = 19 MHz
-
78
-
adjacent channel power baseband; 5 MHz channel spacing; B = 3.84 MHz
ratio
fo = 2.5 MHz
-
60
-
fo = 20 MHz
-
61
-
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBm/Hz
dBm/Hz
dBm/Hz
dBc
dBc
dBc
dBc
dBc
[1] Guaranteed by design.
Table 6. Band gap
Band gap disable (GAPD)
LOW
HIGH
Band gap input/output (GAPOUT)
output (VGAPOUT = 1.2 V)
input
Internal band gap
enable
disable
DAC1003D160_2
Product data sheet
Rev. 02 — 13 August 2008
© NXP B.V. 2008. All rights reserved.
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