DIMD10A 查看數據表（PDF） - Diodes Incorporated.
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DIMD10A Datasheet PDF : 4 Pages
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DIMD10A
Electrical Characteristics NPN Section Tr2 @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product (Note 3)
Notes: 3. Transistor - For Reference Only
Symbol Min Typ Max
BVCBO
50 ⎯
⎯
BVCEO
50 ⎯
⎯
BVEBO
5
⎯
⎯
ICBO
⎯
⎯
0.5
IEBO
⎯
⎯
0.5
VCE(SAT)
⎯
⎯
0.3
hFE
100 250 600
fT
⎯ 250 ⎯
Unit
V
V
V
μA
μA
V
⎯
MHz
Test Condition
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 50V
VEB = 4V
IC/IB = 10mA / 1.0mA
IC = 1mA, VCE = 5V
VCE = 10V, IE = -5mA, f = 100MHz
Typical Curves - Tr2
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
IC/IB = 10
0.1
0.01
75°C
25°C
-25°C
1,000
100
VCE = 10
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
4
IE = 0mA
3
2
Cobo
1
0.001
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector Emitter Saturation Voltage
vs. Collector Current
0
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance Characteristics
DIMD10A
Document number: DS30391 Rev. 5 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated
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