DMC2004LPK-7 查看數據表（PDF） - Diodes Incorporated.
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DMC2004LPK-7 Datasheet PDF : 8 Pages
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DMC2004LPK
Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 5)
TA = +25°C
TA = +85°C
ID
750
540
mA
Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 5)
TA = +25°C
TA = +85°C
ID
-600
-430
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
500
250
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
Typ
Max
Unit
BVDSS
20
—
—
V
IDSS
—
—
1
µA
IGSS
—
—
±1
µA
VGS(th)
0.5
—
1.0
V
—
0.4
0.55
RDS (ON)
—
0.5
0.70
Ω
—
0.7
0.90
|Yfs|
200
—
—
mS
VSD
0.5
—
1.2
V
Ciss
—
Coss
—
Crss
—
—
150
pF
—
25
pF
—
20
pF
Test Condition
VGS = 0V, ID = 10µA
VDS = 16V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
VDS = 16V, VGS = 0V
f = 1.0MHz
Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
BVDSS
-20
IDSS
—
IGSS
—
VGS(th)
-0.5
RDS (ON)
—
|Yfs|
200
VSD
-0.5
Ciss
—
Coss
—
Crss
—
Typ
Max
Unit
—
—
V
—
-1.0
µA
—
± 1.0
µA
—
-1.0
V
0.7
0.9
1.1
1.4
Ω
1.7
2.0
—
—
mS
—
-1.2
V
—
175
pF
—
30
pF
—
20
pF
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = -115mA
VDS = -16V, VGS = 0V
f = 1.0MHz
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
2 of 8
www.diodes.com
February 2013
© Diodes Incorporated
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