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零件编号
产品描述 (功能)
DS1330AB 查看數據表(PDF) - Dallas Semiconductor -> Maxim Integrated
零件编号
产品描述 (功能)
生产厂家
DS1330AB
256k Nonvolatile SRAM with Battery Monitor
Dallas Semiconductor -> Maxim Integrated
DS1330AB Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
10
DS1330Y/AB
(
t
A
= 25
°
C)
UNITS NOTES
pF
pF
AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
OE
to Output Valid
CE
to Output Valid
OE
or
CE
to Output Active
Output High Z from Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from
WE
Output Active from
WE
Data Setup Time
Data Hold Time
(V
CC
= 5V
±
5% for DS1330AB)
(t
A
: See Note 10) (V
CC
= 5V
±
10% for DS1330Y)
DS1330AB-70 DS1330AB-100
DS1330Y-70 DS1330Y-100
SYMBOL MIN MAX MIN MAX UNITS NOTES
t
RC
70
100
ns
t
ACC
70
100
ns
t
OE
45
50
ns
t
CO
70
100
ns
t
COE
5
5
ns
5
t
OD
25
35
ns
5
t
OH
5
5
ns
t
WC
70
100
ns
t
WP
55
75
ns
3
t
AW
0
0
ns
t
WR1
5
5
t
WR2
12
12
ns
12
13
t
ODW
25
35
ns
5
t
OEW
5
5
ns
5
t
DS
30
40
ns
4
t
DH1
0
0
t
DH2
7
7
ns
12
13
READ CYCLE
SEE NOTE 1
4 of 11
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