DS1845 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated

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DS1845

Dual NV Potentiometer and Memory

Dallas Semiconductor -> Maxim Integrated 

DC ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL CONDITION

Supply Current

Active

Input Leakage

Wiper Resistance

3V

5V

Wiper Current

Input Logic 1

Input Logic 0

Input Logic levels

A0, A1, A2

Input Current each

I/O pin

Standby Current

3V

5V

Low Level Output

Voltage (SDA)

ICC

ILI

RW

IW

VIH

VIL

Istby

VOL1

VOL2

I/O Capacitance

CI/O

Pulse width of spikes

tSP

which must be

suppressed by the

input filter

WP Internal Pull Up

Rwp

Resistance, Rwp

Input Logic 1

Input Logic 0

0.4<VI/O

<0.9VDD

3 mA sink

current

6 mA sink

current

Fast Mode

DS1845

(-40°C to +85°C; VCC =2.7V to 5.5V)

MIN TYP MAX UNITS NOTES

0.5

mA 16,17

-1

+1

µA

500 1000

Ω

250 500

1

mA

0.7 VCC

VCC+0.5 V

1,2

GND-0.5

0.3 VCC

V

1,2

0.7 VCC

GND-0.5

VCC+0.5 V

4

0.3 VCC

-10

+10

µA

5

15

40

µA

25

0.0

0.4

V

0.0

0.6

V

10

pF

0

50

ns

40

65 100

kΩ

ANALOG RESISTOR CHARACTERISTICS (-40°C to +85°C; VCC=2.7V to 5.5V)

PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES

End-to-End

Resistance

Absolute Linearity

Relative Linearity

-3 dB Cutoff

frequency

fcutoff

Temperature

Coefficient

-20

+20

%

19

-0.5

-0.25

+0.5 LSB

13

+0.25 LSB

14

kHz

12

750

ppm/°C

15

10 of 13

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