DS2755E 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS2755E Datasheet PDF : 20 Pages
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ABSOLUTE MAXIMUM RATINGS*
Voltage on PIO Pin, Relative to VSS
Voltage on All Other Pins, Relative to VSS
Continuous Sink Current, DQ, PIO
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
DS2755: High-Accuracy Battery Fuel Gauge with Snapshot
-0.3V to +12V
-0.3V to +6V
12mA
-40°C to +85°C
-55°C to +125°C
See J-STD-020 Specification
* This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage
Data Pin
SYMBOL
VDD
DQ
CONDITIONS
(Note 1)
(Note 1)
(2.5V ≤ VDD ≤ 5.5V, TA = -20°C to +70°C.)
MIN
TYP
MAX UNITS
2.5
5.5
V
-0.3
+5.5
V
VIN Pin
VIN
(Note 1)
-0.3
+5.5
V
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
(2.5V ≤ VDD ≤ 5.5V, TA = -20°C to +70°C.)
MIN TYP MAX UNITS
Active Current
IACTIVE
DQ = VDD, EEC bit = 0,
0°C to +50°C, 2.5V < VDD < 4.2V
DQ = VDD, EEC bit = 0
75
100
μA
110
Sleep-Mode Current
ISLEEP
DQ = 0V (Note 3)
1
2
μA
Current Measurement
Input Range
VIS1-IS2
(Note 2)
±64
mV
Current Register Offset
Error
IOERR
(Note 5)
±7.813
μV
Current Gain Error
IGERR
(Note 2, 6)
±1
%I
reading
24 Hour Accumulated
Current Error
Current Sampling
Frequency
IS1-VSS, IS2-SNS Filter
Resistors
Input Resistance: VIN
Voltage Offset Error
Voltage Gain Error
Temperature Error
Input Logic High:
DQ, PIO
Input Logic Low:
DQ, PIO
Output Logic Low:
DQ, PIO
DQ Pulldown Current
DQ Capacitance
DQ Low-to-Sleep Time
Undervoltage Detect
Undervoltage Delay
Internal Timebase
Accuracy
qCA
fSAMP
RKS
RIN
VOERR
VGERR
TERR
VIH
VIL
VOL
IPD
CDQ
tSLEEP
VUV
tUVD
tERR
VIS1-IS2 = 0, OBEN set,
(Note 2, 7, 4)
+25°C
VIN = VDD
(Note 8)
(Note 9)
(Note 1)
(Note 1)
IOL = 4mA
(Note 1)
(Note 1)
0°C to +50°C (Note 10)
-20°C to +70°C
-200 -100
0
µVhr
1456
Hz
10
5
1.5
kΩ
MΩ
±5
mV
±2
%V
reading
±3
°C
V
0.4
V
0.4
V
1
μA
60
pF
2.1
s
2.45 2.5 2.55
V
90 100 110
ms
±1
±2
±3
%
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