EM636327TQ-55 查看數據表（PDF） - Etron Technology

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EM636327TQ-55

512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)

Etron Technology 

EtronTech

EM636327

512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)

Preliminary (12/98)

Features

• Fast access time from clock: 5/5/5.5/6.5/7.5 ns

• Fast clock rate: 183/166/143/125/100 MHz

• Fully synchronous operation

• Internal pipelined architecture

• Dual internal banks(256K x 32-bit x 2-bank)

• Programmable Mode and Special Mode registers

- CAS# Latency: 1, 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst-Read-Single-Write

- Load Color or Mask register

• Burst stop function

• Individual byte controlled by DQM0-3

• Block write and write-per-bit capability

• Auto Refresh and Self Refresh

• 2048 refresh cycles/32ms

• Single +3.3V±0.3V power supply

• Interface: LVTTL

• JEDEC 100-pin Plastic package

-QFP (body thickness=2.8mm)

-TQFP1.4 (body thickness=1.4mm)

-TQFP1.0 (body thickness=1.0mm)

Overview

The EM636327 SGRAM is a high-speed

CMOS synchronous graphics DRAM containing 16

Mbits. It is internally configured as a dual 256K x

32 DRAM with a synchronous interface (all signals

are registered on the positive edge of the clock

signal, CLK). Each of the 256K x 32 bit banks is

organized as 1024 rows by 256 columns by 32 bits.

Read and write accesses to the SGRAM are burst

oriented; accesses start at a selected location and

continue for a programmed number of locations in

a programmed sequence. Accesses begin with the

registration of a BankActivate command which is

then followed by a Read or Write command.

The EM636327 provides for programmable

Read or Write burst lengths of 1, 2, 4, 8, or full

Key Specifications

EM636327

- 55/6/7/8/10

tCK3 Clock Cycle time(min.)

5.5/6/7/8/10 ns

tRAS Row Active time(max.)

32/36/42/48/60 ns

tAC1 Access time from Read command 7/8/13/18/23 ns

tAC3 Access time from CLK(max.)

5/5/5.5/6.5/7.5 ns

tRC Row Cycle time(min.)

48/54/63/72/90 ns

Ordering Information

Part Number Frequency Package

EM636327Q-10

100MHz

QFP

EM636327R-10

100MHz QFP (Reverse)

EM636327TQ-10 100MHz

TQFP1.4

EM636327JT-10

100MHz

TQFP1.0

EM636327Q-8

125MHz

QFP

EM636327R-8

125MHz QFP (Reverse)

EM636327TQ-8

125MHz

TQFP1.4

EM636327JT-8

125MHz

TQFP1.0

EM636327Q-7

143MHz

QFP

EM636327TQ-7

143MHz

TQFP1.4

EM636327Q-6

166MHz

QFP

EM636327TQ-6

166MHz

TQFP1.4

EM636327Q-55

183MHz

QFP

EM636327TQ-55 183MHz

TQFP1.4

page, with a burst termination option. An auto

precharge function may be enabled to provide a

self-timed row precharge that is initiated at the end

of the burst sequence. The refresh functions,

either Auto or Self Refresh are easy to use. In

addition, EM636327 features the write-per-bit and

the masked block write functions.

By having a programmable mode register and

special mode register, the system can choose the

most suitable modes to maximize its performance.

These devices are well suited for applications

requiring high memory bandwidth, and when

combined with special graphics functions result in

a device particularly well suited to high

performance graphics applications.

Etron Technology, Inc.

1F, No. 1, Prosperity Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C

TEL: (886)-3-5782345 FAX: (886)-3-5779001

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

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