EN29LV800C(2008) 查看數據表（PDF） - Eon Silicon Solution Inc.

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EN29LV800C
(Rev.:2008)

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Eon Silicon Solution Inc. 

EN29LV800C

Table 6. Status Register Bits

DQ

Name

Logic Level

Definition

Erase Complete or

‘1’

erase Sector in Erase

suspend

7

DATA#

POLLING

‘0’

DQ7

Erase On-Going

Program Complete or

data of non-erase Sector

during Erase Suspend

DQ7#

Program On-Going

‘-1-0-1-0-1-0-1-’ Erase or Program On-going

6

TOGGLE

BIT

DQ6

Read during Erase Suspend

‘-1-1-1-1-1-1-1-‘

Erase Complete

5

ERROR BIT

‘1’

Program or Erase Error

‘0’

Program or Erase On-going

ERASE

3

TIME BIT

‘1’

Erase operation start

‘0’

Erase timeout period on-going

Chip Erase, Sector Erase or

Erase suspend on currently

addressed

Sector. (When DQ5=1, Erase

2

TOGGLE

BIT

‘-1-0-1-0-1-0-1-’

Error due to currently

addressed Sector. Program

during Erase Suspend on-

going at current address

DQ2

Erase Suspend read on

non Erase Suspend Sector

Notes:

DQ7 DATA# Polling: indicates the P/E C status check during Program or Erase, and on completion before checking bits

DQ5 for Program or Erase Success.

DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged.

Successive reads output complementary data on DQ6 while programming or Erase operation are on-going.

DQ5 Error Bit: set to “1” if failure in programming or erase

DQ3 Sector Erase Command Timeout Bit: Operation has started. Only possible command is Erase suspend (ES).

DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector.

This Data Sheet may be revised by subsequent versions 17 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

Rev. D, Issue Date: 2008/09/19

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