SLD327YT-2 查看數據表（PDF） - Sony Semiconductor

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SLD327YT-2

3W High Power Laser Diode

Sony Semiconductor 

SLD327YT

Optical and Electrical Characteristics

Item

Symbol

Threshold current

Ith

Operating current

Iop

Operating voltage

Vop

Wavelength∗

λP

Radiation angle

Perpendicular θ⊥

Parallel

θ//

Position

∆X, ∆Y

Positional accuracy

∆φ⊥

Angle

∆φ//

Differential efficiency

ηD

Monitor current

Imon

Thermistor resistance

Rth

(Tth = Thermistor temperature, Tth = 25°C)

Conditions Min.

Typ.

Max. Unit

0.6

2.0

A

PO = 3.0W

4.0

6.0

A

PO = 3.0W

2.4

3.0

V

PO = 3.0W

790

840

nm

20

30

40 degree

PO = 3.0W

5

10

20 degree

±100 µm

PO = 3.0W

±3 degree

±4 degree

PO = 3.0W

0.5

0.85

1.5

W/A

PO = 3.0W

VR = 10V

0.2

1.1

4.0

mA

Tth = 25°C

10

kΩ

∗Wavelength Selection

Type

Wavelength (nm)

SLD327YT-1

795 ± 5

SLD327YT-2

810 ± 10

SLD327YT-3

830 ± 10

Type

Wavelength (nm)

SLD327YT-21

798 ± 3

SLD327YT-24

807 ± 3

SLD327YT-25

810 ± 3

Handling Precautions

Eye protection against laser beams

The optical output of laser diodes ranges from

several mW to 10W. However the optical power

density of the laser beam at the diode chip

reaches 1.5MW/cm2. Unlike gas lasers, since

laser diode beams are divergent, uncollimated

laser diode beams are fairly safe at a laser

diode. For observing laser beams, ALWAYS use

safety goggles that block infrared rays. Usage of

IR scopes, IR cameras and fluorescent plates is

also recommended for monitoring laser beams

safely.

Laser diode

Lens

Optical

material

Optical board

Optical power output control device

Temperature control device

–2–

Safety goggles for

protection from

laser beam

IR fluorescent plate

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