M48Z512AY(2006) 查看數據表（PDF） - STMicroelectronics
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M48Z512AY Datasheet PDF : 24 Pages
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M48Z512A M48Z512AY M48Z512AV
Operating modes
2.4
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (see Figure 9)
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on VCC that drive it to values below VSS by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from VCC to VSS (cathode connected to VCC, anode to VSS). (Schottky diode 1N5817
is recommended for through hole and MBRS120T3 is recommended for surface-mount).
Figure 9. Supply voltage protection
A0-A18
E
W
DQ0-DQ7
tAVEL
tAVWL
tAVAV
VALID
tAVEH
tELEH
tEHAX
tEHDX
DATA INPUT
tDVEH
AI01223
13/24
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