FDFS2P102 查看數據表（PDF） - Fairchild Semiconductor
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FDFS2P102 Datasheet PDF : 5 Pages
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October 2000
FDFS2P102
Integrated P-Channel MOSFET and Schottky Diode
General Description
The FDFS2P102 combines the exceptional performance of
Fairchild's high cell density MOSFET with a very low forward
voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a variety
of DC/DC converter topologies.
Applications
• DC/DC converters
• Load Switch
• Motor Drives
Features
• –3.3 A, –20 V. RDS(ON) = 0.125 Ω @ VGS = –10 V
RDS(ON) = 0.200 Ω @ VGS = –4.5 V.
• VF < 0.39 V @ 1 A (TJ = 125 oC).
VF < 0.47 V @ 1 A.
VF < 0.58 V @ 2 A.
• Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
• Electrically independent Schottky and MOSFET pinout for
design flexibility.
D
D
C
C
Pin 1
G
S
A
A
A1
A2
S3
G4
MOSFET Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
Ratings
-20
±20
-3.3
-20
2
1.6
1
0.9
-55 to +150
Schottky Diode Maximum Ratings TA=25oC unless otherwise noted
VRRM
Repetitive Peak Reverse Voltage
20
IO
Average Forward Current
(Note 1a)
1
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDFS2P102
FDFS2P102
13
Tape Width
12mm
2000 Fairchild Semiconductor International
8C
7C
6D
5D
Units
V
V
A
W
°C
V
A
Quantity
2500 units
FDFS2P102 Rev. E
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