FDG6318P 查看數據表（PDF） - Fairchild Semiconductor

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FDG6318P

Dual P-Channel, Digital FET

Fairchild Semiconductor 

Typical Characteristics

1.8

VGS = -10.0V

-6.0V

1.2

0.6

-3.5V

-4.5V

-3.0V

-2.5V

-2.0V

0

0

0.5

1

1.5

2

2.5

3

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

1.75

1.5

VGS = -3.5V

-4.0V

-4.5V

1.25

-5.0V

-6.0V

1

-10.0V

0.75

0

0.4

0.8

1.2

1.6

-ID, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

1.3

ID = -0.5A

VGS = -4.5V

1.2

1.1

1

0.9

0.8

0.7

-50

-25

0

25

50

75

100

125

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation with

Temperature.

1.8

ID = -0.25A

1.4

1

TA = 125oC

0.6

TA = 25oC

0.2

0

2

4

6

8

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

1.8

VDS = -5V

1.2

0.6

TA = -55oC

25oC

125oC

10

VGS = 0V

1

TA = 125oC

0.1

0.01

0.001

25oC

-55oC

0

0.5

1

1.5

2

2.5

3

3.5

-VGS, GATE TO SOURCE VOLTAGE (V)

0.0001

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDG6318P Rev C (W)

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