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FDP10N60NZ 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
生产厂家
FDP10N60NZ
Fairchild
Fairchild Semiconductor Fairchild
FDP10N60NZ Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Package Marking and Ordering Information
Device Marking
FDP10N60NZ
FDPF10N60NZ
Device
FDP10N60NZ
FDPF10N60NZ
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
600
ID = 250A, Referenced to 25oC
-
VDS = 600V, VGS = 0V
-
VDS = 480V, TC = 125oC
-
VGS = ±25V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 5A
-
gFS
Forward Transconductance
VDS = 20V, ID = 5A
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 10A
VGS = 10V
-
-
-
-
-
(Note 4)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, ID = 10A
RG = 25
-
-
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
trr
Reverse Recovery Time
VGS = 0V, ISD = 10A
-
Qrr
Reverse Recovery Charge
dIF/dt = 100A/s
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.6
-
-
-
-
0.64
14
1110
130
10
23
6
8
25
50
70
50
-
-
-
300
2
Quantity
50
50
Max. Unit
-
V
-
V/oC
1
A
10
±10 A
5.0
V
0.75
-
S
1475 pF
175 pF
15
pF
30
nC
-
nC
-
nC
60
ns
110
ns
150
ns
110
ns
10
A
40
A
1.4
V
-
ns
-
C
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C0
2
www.fairchildsemi.com

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