VG26S17400E 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17400E

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor  

VIS

• Fast Page Mode Delayed Write Cycle

VG26(V)(S)17400E

4,194,304 x 4 - Bit

CMOS Dynamic RAM

RAS

tT

CAS

tRCD

tCSH

tCP

tCAS

tRASP

tCP

tPC

tCAS

tCPRH

tRSH

tCAS

tRP

tCRP

tASR

tRAD

tRAH

tASC

tCAH

ADDRESS

Row

ColumCnol1umn 1

tCWL

tASC

tCAH

Column 2

tRCS

tRCS

tASC

tCAH

Column N

tCWL

tRCS

tCWL

tRWL

WE

WE

DQ1 ~ DQ4

tDZC

tDZO

tWP

tWP

tWP

tDS

tDZC tDS

tDS

tDZC

tDH

tDH

tDH

OPEN

DIN 1

OPEN

DIN 2

OPEN

DIN N

tDZO

tDZO

tOED

tOEH

tOED

tOEH

tOED

tOEH

OE

Document : 1G5-0142

Rev.1

Page 20

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