FQA13N50CF 查看數據表（PDF） - Fairchild Semiconductor
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FQA13N50CF Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2. I = 250 µA
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 7.5 A
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
Figure 10. Maximum Drain Current
vs. Case Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 11. Transient Thermal Response Curve
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [°C]
C
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .05
0 .0 2
0 .0 1
sin g le p u lse
N otes :
1 . Z (t) = 0 .5 8 °C /W M a x.
θJC
2 . D u ty F a cto r, D = t /t
12
3 . T - T = P * Z (t)
JM
C
DM
θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
©2007 Fairchild Semiconductor Corporation
4
FQA13N50CF Rev. C0
www.fairchildsemi.com
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