FQD1N50B 查看數據表（PDF） - Fairchild Semiconductor
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FQD1N50B Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
VGS
15 V
10 V
8.0 V
100
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics.
24
20
V = 10V
GS
16
V = 20V
GS
12
8
4
※ Note : T = 25℃
J
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage.
200
150
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
oss
100
※ Notes :
50
1. VGS = 0 V
C
rss
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics.
©2000 Fairchild Semiconductor International
100
150℃
10-1
10-2
2
25℃
-55℃
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics.
100
10-1
10-2
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
12
10
VDS = 100V
VDS = 250V
8
V = 400V
DS
6
4
2
※ Notes : ID = 1.4 A
0
0
1
2
3
4
5
QG, Total Gate Charge [nC]
Figure 6. Gate -Charge Characteristics.
Rev. A, May 2000
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