FQD3P50 查看數據表（PDF） - Fairchild Semiconductor
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FQD3P50 Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
100
-6.0 V
Bottom : -5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
8
7
VGS = - 10V
6
VGS = - 20V
5
4
3
※ Note : TJ = 25℃
2
0
2
4
6
8
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Ciss
600
Coss
400
※ Notes :
1. VGS = 0 V
Crss
2. f = 1 MHz
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor International
100
150℃
10-1
2
25℃
-55℃
※ Notes :
1. VDS = -50V
2. 250μs Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.0
150℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = -100V
VDS = -250V
8
VDS = -400V
6
4
2
※ Note : ID = -2.7 A
0
0
2
4
6
8 10 12 14 16 18 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, January 2009
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