FQU1N60C(2003) 查看數據表（PDF） - Fairchild Semiconductor
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FQU1N60C Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
30
25
20
15
10
5
0
0.0
VGS = 10V
V = 20V
GS
※ Note : TJ = 25℃
0.5
1.0
1.5
2.0
2.5
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
250
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
C
iss
150
C
oss
100
※ Notes ;
50
Crss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
100
150oC
25oC
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 1A
0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, November 2003
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