FQPF7N65CYDTU 查看數據表（PDF） - Fairchild Semiconductor
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FQPF7N65CYDTU Datasheet PDF : 10 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1.
2.
VIDG=S =2500Vµ
A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101
10 µs
100 µs
1 ms
100
10 ms
DC
10-1
※ Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e5P0uoClse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
VIDG=S
= 10 V
3.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
100
0 .2
0.1
1 0 -1
0.0 5
0 .02
0.0 1
1 0 -2
sing le pu lse
※ Notes :
1.
2.
3.
DZ θu Jt
T JM
Cy (
-
t)
F
T
= 2.4
a c to r,
C = PD
℃ /W
MD*=Zt 1θ/
t
Max
2
JC
(
t
)
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
Figure 11 . Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
FQPF7N65C Rev. C1
www.fairchildsemi.com
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