FS5ASJ-3
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min.
150
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
1.5
0.27
0.28
0.54
9.5
800
100
35
14
17
65
31
1.0
—
85
Max.
—
±0.1
0.1
2.0
0.35
0.37
0.70
—
—
—
—
—
—
—
—
1.5
4.17
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test conditions
ID = 1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 150 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V
ID = 2 A, VGS = 4 V
ID = 2 A, VGS = 10 V
ID = 2 A, VDS = 5 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
VDD = 80 V, ID = 2 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 2 A, VGS = 0 V
Channel to case
IS = 5 A, dis/dt = –100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6