FS5ASJ-3 查看數據表（PDF） - Renesas Electronics
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FS5ASJ-3 Datasheet PDF : 7 Pages
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FS5ASJ-3
Transfer Characteristics (Typical)
10
Tc = 25°C
VDS = 10V
8
Pulse Test
6
4
2
0
0
2
4
6
8
10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
104
7
5
3
2
103
Ciss
7
5
3
2
102
7
5
3
2
Tch = 25°C
f = 1MHz
VGS = 0V
Coss
Crss
101
3
5 7 100 2 3
5 7 101 2 3
5 7 102 2 3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
Tch = 25°C
ID = 5A
8
VDS = 50V
6
80V
4
100V
2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Rev.2.00 Aug 07, 2006 page 4 of 6
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7 VDS = 10V
5 Pulse Test
4
3
2
101
7
5
4
Tc = 25°C
3
75°C
2
125°C
100100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Switching Characteristics (Typical)
103
7
5
4
Tch = 25°C
VDD = 80V
VGS = 10V
3
RGEN = RGS = 50Ω
2
102
7
5
4
3
2
10110–1 2 3 4 5 7 100
td(off)
tf
tr
td(on)
2 3 4 5 7 101
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
20
VGS = 0V
Pulse Test
16
12 Tc = 125°C
8
75°C
25°C
4
0
0
0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage VSD (V)
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