GM1188 查看數據表（PDF） - Unspecified
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GM1188 Datasheet PDF : 2 Pages
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CORPORATION ISSUED DATE :2005/07/19
REVISED DATE :2005/10/19B
G M 11 8 8
PNP SILICON EPITAXIAL TRANSISTOR
Description
The GM1188 is designed for medium power amplifier applications.
Features
ԦLow collector saturation voltage : VCE(sat)=-0.5V(Typ.)
ԦComplementary pair with GM1766
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
*When mounted on a 40x40x0.7mm ceramic board.
Ratings
+150
-55~+150
-40
-32
-5
-2
0.5 (2.0*)
Unit
ć
ć
V
V
V
A
W
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-50uA , IE=0
BVCEO
BVEBO
ICBO
-32
-
-5
-
-
-
-
V
IC=-1mA, IB=0
-
V
IE=-50uA ,IC=0
-1
uA
VCB=-20V, IE=0
IEBO
*VCE(sat)
*hFE
-
-
-1
uA
VEB=-4V, IC=0
-
-500
-800
mV IC=-2A, IB=-200mA
82
-
390
VCE=-3V, IC=-500mA
fT
-
150
-
MHz VCE=-5V, IC=-500mA, f=30MHz
Cob
-
50
-
pF
VCB=-10V, IE=0, f=1MHz
Classification Of hFE
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
1/2
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