GS8170LW72AGC-250IT 查看數據表（PDF） - Giga Semiconductor

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GS8170LW72AGC-250IT

18Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM™

Giga Semiconductor 

GS8170LW36/72AC-350/333/300/250

Undershoot Measurement and Timing

VIH

VSS

50%

VSS – 1.0 V

20% tKC

Capacitance

(TA = 25oC, f = 1 MHZ, VDD = 1.8 V)

Parameter

Symbol

Input Capacitance

Output Capacitance

Note:

This parameter is sample tested.

CIN

COUT

Overshoot Measurement and Timing

VDD + 1.0 V

50%

20% tKC

VDD

VIL

Test conditions

VIN = 0 V

VOUT = 0 V

Typ. Max. Unit

4

5

pF

6

7

pF

AC Test Conditions

Parameter

Input high level

Input low level

Max. input slew rate

Input reference level

Output reference level

AC Test Load Diagram

Conditions

VDDQ

0V

2 V/ns

VDDQ/2

VDDQ/2

DQ

RQ = 250 Ω (HSTL I/O)

50Ω

VT = VDDQ/2

Rev: 1.04 4/2005

16/32

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

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