GS8170LW36AGC-300T 查看數據表（PDF） - Giga Semiconductor

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GS8170LW36AGC-300T

18Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM™

Giga Semiconductor 

GS8170LW36/72AC-350/333/300/250

Input and Output Leakage Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZQ, MCH, MCL, EP2, EP3

Pin Input Current

Symbol

IIL

IINM

Output Leakage Current

IOL

Test Conditions

VIN = 0 to VDDQ

VIN = 0 to VDDQ

Output Disable,

VOUT = 0 to VDDQ

Selectable Impedance Output Driver DC Electrical Characteristics

Parameter

Symbol

Low Drive Output High Voltage

VOHL

Low Drive Output Low Voltage

High Drive Output High Voltage

VOLL

VOHH

High Drive Output Low Voltage

VOLH

Notes:

1. ZQ = 1; High Impedance output driver setting

2. ZQ = 0; Low Impedance output driver setting

Test Conditions

IOHL = –4 mA

IOLL = 4 mA

IOHH = –8 mA

IOLH = 8 mA

Min.

–2 uA

–50 uA

–2 uA

Max Notes

2 uA

—

50 uA

—

2 uA

—

Min.

VDDQ – 0.4 V

—

VDDQ – 0.4 V

—

Max Notes

—

1

0.4 V

1

—

2

0.4 V

2

Rev: 1.04 4/2005

17/32

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

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