H7N0310LD(2002) 查看數據表（PDF） - Renesas Electronics
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H7N0310LD Datasheet PDF : 14 Pages
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H7N0310LD, H7N0310LS, H7N0310LM
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
I D = 30 A
VGS
40
16
VDD = 25 V
10 V
30 VDS
5V
12
20
8
10
VDD = 25 V
4
10 V
5V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
500
tr
200
100
t d(off)
50
t d(on)
20
tf
10
VGS = 10 V, V DS = 10 V
Rg = 4.7 Ω, duty < 1 %
5
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.3, Aug. 2002, page 6 of 6
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