HAL503SF-K 查看數據表（PDF） - Micronas
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HAL503SF-K Datasheet PDF : 48 Pages
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DATA SHEET
HAL 5xy
3.6. Characteristics
at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics
for TJ = 25 °C and VDD = 12 V
Symbol
IDD
IDD
VDDZ
VOZ
Parameter
Pin No.
Supply Current
1
Supply Current over
1
Temperature Range
Overvoltage Protection
1
at Supply
Overvoltage Protection at Output 3
Min.
2.3
1.6
−
−
Typ.
3
3
28.5
28
Max.
Unit
4.2
mA
5.2
mA
32
V
32
V
VOL
Output Voltage
VOL
Output Voltage over
Temperature Range
3
−
130
280
mV
3
−
130
400
mV
IOH
Output Leakage Current
3
−
0.06
0.1
μA
IOH
Output Leakage Current over
3
−
−
10
μA
Temperature Range
fosc
Internal Oscillator
Chopper Frequency
−
−
62
−
kHz
ten(O)
Enable Time of Output after
1
−
50
−
μs
Setting of VDD
tr
Output Rise Time
3
−
75
400
ns
tf
Output Fall Time
3
−
50
400
ns
RthJSB
Thermal Resistance Junction
−
−
150
200
K/W
case
to Substrate Backside
SOT89B-1
RthJA
Thermal Resistance Junction
−
−
150
200
K/W
case
to Soldering Point
TO92UA-1,
TO92UA-2
1) B > BON + 2 mT or B < BOFF − 2 mT for HAL50x, B > BOFF + 2 mT or B < BON − 2 mT for HAL51x
Conditions
TJ = 25 °C
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
IOL = 20 mA , TJ = 25 °C
IOL = 20 mA
Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24 V
VDD = 12 V 1)
VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size see Fig. 3–6
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
Micronas
Jan. 11. 2010; DSH000020_004EN
15
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