HAL556 查看數據表（PDF） - Micronas
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HAL556 Datasheet PDF : 26 Pages
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HAL55x, HAL56x
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No. Min.
Typ.
Max.
Unit
IDD
Low Current Consumption
1
2
3.3
5
mA
over Temperature Range
IDD
High Current Consumption
1
12
14.3
17
mA
over Temperature Range
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
fosc
Internal Oscillator
Chopper Frequency
−
−
145
−
kHz
ten(O)
Enable Time of Output after
1
−
30
−
μs
Setting of VDD
tr
Output Rise Time
1
−
0.4
1.6
μs
tf
Output Fall Time
1
−
0.4
1.6
μs
RthJSB
Thermal Resistance Junction
−
−
150
200
K/W
case
to Substrate Backside
SOT89B-1
RthJA
Thermal Resistance Junction
−
−
150
200
K/W
case
to Soldering Point
TO92UA-1,
TO92UA-2
1)B > BON + 2 mT or B < BOFF - 2 mT for HAL55x, B > BOFF + 2 mT or B < BON - 2 mT for HAL56x
Conditions
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
1)
VDD = 12 V, Rs = 30 Ω
VDD = 12 V, Rs = 30 Ω
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–1
1.80
1.05
1.45
2.90
0.50
1.05
1.50
Fig. 3–1: Recommended pad size SOT89B-1
Dimensions in mm
14
Aug. 11, 2009; DSH000026_004EN
Micronas
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