HCF40105BEY 查看數據表（PDF） - STMicroelectronics
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HCF40105BEY Datasheet PDF : 12 Pages
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HCC/HCF40105B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25 °C, CL = 50 pF, RL = 200 kΩ,
typical temperature coefficient for all VDD values is 0.3 %/°C, all input rise and fall time = 20 ns)
Symbol
Parameter
tP HL Propagation Delay Time
Shift-out or Reset to Data-out
Ready
Test Conditions
Value
V D D (V) Min. Typ. Max.
5
185 370
10
90 180
15
65 130
tP HL Propagation Delay Time
Shift-in to Data-in Ready
5
160 320
10
65 130
t P ZH, tP ZL Propagation Delay Time
3-state Control to Data-out
t P HZ, tP L Z Propagation Delay Time
3-State Control to Data-out
15
45 90
5
140 280
10
60 120
15
40 80
5
100 200
10
50 100
15
40 80
tPLH
Ripple-through Delay Input to
Output
5
2
4
10
1
2
15
0.7 1.4
t THL , t TL H Transition Time
5
100 200
10
50 100
fI
Shift-in or Shift-out Rate
15
40 80
5
1.5
3
10
3
6
15
4
8
t WH Shift-in Pulse Width
5
200 100
10
80 40
15
60 30
t WL
Shift-out Pulse Width
5
360 180
10 160 80
15 100 50
tr
Shift-in or Shift-out Rise Time
5
15
10
15
tf
Shift-in Fall Time
15
15
5
15
10
15
15
15
tf
Shift-out Fall Time
5
15
10
5
15
5
t s e tu p Data Setup Time
5
0
10
0
15
0
Unit
ns
ns
ns
ns
µs
ns
MHz
ns
ns
µs
µs
µs
ns
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