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HDD16M72D9W 查看數據表(PDF) - Hanbit Electronics Co.,Ltd

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HDD16M72D9W Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
HANBit
HDD16M72D9W
AC Timming Parameters & Specifications (These AC charicteristics were tested on the Component)
DDR200
DDR266A
DDR266B
PARAMETER
SYMBOL
-10A
-13A
-13B
UNIT NOTE
MIN MAX MIN MAX MIN MAX
Row cycle time
Refresh row cycle time
Row active time
tRC
70
65
65
ns
1
tRFC
80
75
75
ns 1,2
tRAS
48 120K 45 120K 45 120K ns 1,2
/RAS to /CAS delay
tRCD
20
20
Row precharge time
tRP
20
20
Row active to Row active delay
tRRD
15
15
20
ns
3
20
ns
3
15
ns
3
Write recovery time
tWR
15
15
Last data in to Read command
tCDLR
1
1
15
tCK
3
1
tCK
2
Col. address to Col. address delay
tCCD
1
1
1
tCK
Clock cycle time
CL=2.0
CL=2.5
10
12
7.5
12
10
12
ns
tCK
12
7.5
12
7.5
12
ns
Clock high level width
Clock low level width
tCH
0.45 0.55 0.45 0.55 0.45 0.55 tCK
tCL
0.45 0.55 0.45 0.55 0.45 0.55 tCK
DQS-out access time from CK/CK
tDQSCK -0.8 +0.8 -0.75 +0.75 -0.75 +0.75 ns
Output data access time from CK/CK
tAC
-0.8 +0.8 -0.75 +0.75 -0.75 +0.75 ns
Data strobe edge to ouput data edge
tDQSQ
-
+0.6
-
+0.5
-
+0.5 ns
Read Preamble
Read Postamble
tRPRE
0.9 1.1
0.9
1.1
0.9
1.1
tCK
tRPST
0.4 0.6
0.4
0.6
0.4
0.6
tCK
Data out high impedence time from CK-/CK tHZQ
-0.8 +0.8 -0.75 +0.75 -0.75 +0.75 ns
2
CK to valid DQS-in
tDQSS
0.75 1.25 0.75
1.25 0.75 1.25
tCK
DQS-in setup time
tWPRES
0
0
0
ns
3
DQS-in hold time
tWPREH
0.25
0.25
0.25
tCK
DQS-in falling edge to CK rising-setup time tDSS
0.2
0.2
0.2
tCK
DQS-in falling edge to CK rising hold time
tDSH
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
tCK
DQS-in cycle time
Address and Control Input setup time
Address and Control Input hold time
tDSC
0.9 1.1
0.9
1.1
0.9
1.1
tCK
tIS
1.1
0.9
0.9
ns
tIH
1.1
0.9
0.9
ns
Mode register set cycle time
tMRD
16
15
15
ns
DQ & DM setup time to DQS
tDS
0.6
0.5
0.5
ns
DQ & DM hold time to DQS
tDH
0.6
0.5
0.5
ns
DQ & DM input pulse width
tDIPW
2
1.75
1.75
ns
Power down exit time
tPDEX
10
7.5
Exit self refresh to write command
tXSW
116
95
7.5
ns
ns
Exit self refresh to bank active command
tXSA
80
75
75
ns
Exit self refresh to read command
Refresh interval time
tXSR
200
tREF
15.6
200
15.6
200
Cycle
15.6
us
1
Output DQS valid window
DQS write postamble time
tQH
-
-
-
-
-
-
tCK
tWPST
0.4 0.6
0.4
0.6
0.4 0.6
tCK
4
URL : www.hbe.co.kr
REV 1.0 (November.2002)
7
HANBit Electronics Co.,Ltd.

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