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HSDL-3208-021 查看數據表(PDF) - HP => Agilent Technologies

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HSDL-3208-021 Datasheet PDF : 18 Pages
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CAUTIONS: The BiCMOS inherent to the design of this component increases the component’s
susceptibility to damage from the electrostatic discharge (ESD). It is advised that normal static
precautions be taken in handling and assembly of this component to prevent damage and/or degradation
which may be induced by ESD.
Absolute Maximum Ratings
For implementations where case to ambient thermal resistance is _50°C/W.
Parameter
Symbol
Min.
Max.
Storage Temperature
TS
-40
+100
Operating Temperature
TA
-25
+85
LED Anode Voltage
VLEDA
0
6.5
Supply Voltage
VCC
0
6.5
Input Voltage: TXD, SD/Mode
VI
0
6.5
Output Voltage: RXD
VO
0
6.5
DC LED Transmit Current
ILED (DC)
50
Peak LED Transmit Current
ILED (PK)
250
Note:
10. 20% duty cycle, 90 µs pulse width.
Units
°C
°C
V
V
V
V
mA
mA
Notes
10
Recommended Operating Conditions
Parameter
Symbol
Operating Temperature
TA
Supply Voltage
VCC
Logic Input Voltage Logic High VIH
for TXD, SD/Mode Logic Low VIL
Receiver Input
Irradiance
Logic High EIH
Logic Low EIL
LED (Logic High) Current
Pulse Amplitude
ILEDA
Min. Typ.
-25
2.7
2/3 VCC
0
0.0081
50
Max. Units Conditions
+85 °C
3.6
V
VCC
V
1/3 VCC V
500
mW/cm2 For in-band signals 115.2kbit/s[11]
1
µW/cm2 For in-band signals[11]
mA
Receiver Data Rate
9.6
115.2 kbit/s
Note:
11. An in-band optical signal is a pulse/sequence where the peak wavelength, λp, is defined as 850 ≤ λp 900 nm, and the pulse characteristics
are compliant with the IrDA Serial Infrared Physical Layer Link Specification v1.4.
3

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