HSD4M64D4B 查看數據表（PDF） - Hanbit Electronics Co.,Ltd

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产品描述 (功能)

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HSD4M64D4B

Synchronous DRAM Module 32Mbyte (4Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V

Hanbit Electronics Co.,Ltd 

HANBit

HSD4M64D4B

CKE≥VIH(min),

CS*≥VIH(min), tCC=10ns

ICC3N

80

Active standby current in

Input signals are changed

non power-down mode

one time during 20ns

mA

(One bank active)

CKE≥VIH(min)

ICC3NS CLK ≤VIL(max), tCC=∞

40

Input signals are stable

Operating current

(Burst mode)

Refresh current

Self refresh current

IO = 0 mA

Page burst

ICC4

4Banks Activated

tCCD = 2CLKs

ICC5

tRC ≥ tRC(min)

ICC6

CKE ≤ 0.2V

380

300

300 mA

1

500

mA

2

4

mA

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

AC OPERATING TEST CONDITIONS

(vcc = 3.3V ± 0.3V, TA = 0 to 70°C)

PARAMETER

AC Input levels (Vih/Vil)

Input timing measurement reference level

Input rise and fall time

Output timing measurement reference level

Output load condition

Value

2.4/0.4

1.4

tr/tf = 1/1

1.4

See Fig. 2

UNIT

V

V

ns

V

+3.3V

DOUT

870Ω

1200Ω

50pF*

DOUT

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

(Fig. 1) DC output load circuit

Vtt=1.4V

Z0=50Ω

50Ω

50pF

(Fig. 2) AC output load circuit

URL:www.hbe.co.kr

-6-

REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd

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