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HV311 查看數據表(PDF) - Supertex Inc

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HV311 Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
GND
R1
475kΩ
R2
16.2kΩ
-48V
8
VDD
PWRGD / PWRGD 1
3 UV
R3
511kΩ
2 OV
R4
10kΩ
HV301/
HV311
RAMP VEE SENSE GATE
7
4
5
6
R6
C1
10nF
ENABLE / ENABLE +5V
Cload
DC/DC
PWM
COM
CONVERTER
R5
12.5mΩ
Q1
IRF530
HV301/HV311
Note: capacitor may be needed to slow PWRGD dv/dt if gate
oscillations around are observed when VIN is close to OVLO.
Application Circuit 11
Reverse Polarity Protection
The UV and OV pins are protected against reverse polarity input
supplies by internal clamping diodes and the fault currents are
sufficiently limited by the impedance of the external resistor
divider, however, a low current diode with a 100V breakdown
rating must be inserted in series with the VDD pin.
This method (shown in Application Circuit 12) will protect the
hot swap control circuit however, due to the intrinsic diode in the
external MOSFET, the load will not be protected from reverse
polarity voltages.
GND
R1
487kΩ
R2
6.81kΩ
R3
9.76kΩ
-48V
D1
8
VDD
3 UV
2 OV
PWRGD / PWRGD 1
HV311
ENABLE / ENABLE +5V
Cload
DC/DC
PWM
COM
CONVERTER
RAMP VEE
7
4
SENSE GATE
5
6
C1
10nF
R4
12.5mΩ
Q1
IRF530
Note: capacitor may be needed to slow PWRGD dv/dt if gate
oscillations around are observed when VIN is close to OVLO.
Application Circuit 12
A092605
15

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