IC42S32200-8TI 查看數據表（PDF） - Integrated Circuit Systems

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IC42S32200-8TI

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Circuit Systems 

IC42S32200

IC42S32200L

Absolute Maximum Rating

Symbol

VIN,VOUT

VDD,VDDQ

TOPR

TSTG

TSOLDER

PD

IOUT

Item

Input,Output Voltage

Power Supply

Operating Temperature

Storage Temperature

Soldering Temperature (10s)

Power Dissipation

Short Circuit Output Current

Rating

-0.3~VDD +0.3

-0.3~4.6

0~70

-55~150

260

1

50

Recommended D.C.Operating Conditions (Ta =0~70 C)

Symbol Parameter

Min. Typ.

VDD

Power Supply Voltage

3.0 3.3

VDDQ Power Supply Voltage(for I/O Buffer) 3.0 3.3

VIH

LVTTL Input High Voltage

2.0

VIL

LVTTL Input Low Voltage

-1.2

Max.

3.6

3.6

VDDQ +1.2

0.8

Capacitance (VDD =3.3V,f =1MHz,Ta =25 C)

Symbol Parameter

Min.

CI

Input Capacitance

CI/O

Input/Output Capacitance

Max.

4.5

6.5

Note:

1. These parameters are periodically sampled and are not 100% tested.

2. VIH(max) for pulse width with ≤ 3ns of duration

VIL(min) for pulse width with ≤ 3ns of duration

Unit Note

V

1

V

1

C

1

C

1

C

1

W

1

mA

1

Unit Note

V

2

V

2

V

2

V

2

Unit

pF

pF

20

Integrated Circuit Solution Inc.

DR036-0D 02/04/2005

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