IPB09N03LAG 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
IPB09N03LAG Datasheet PDF : 9 Pages
| |||
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
18
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
IPB09N03LA G
16
14
2
12
98 %
10
typ
8
6
200 µA
1.5
20 µA
1
4
0.5
2
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. Capacitances
C =f(V DS); V GS=0 V; f =1 MHz
10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
1000
Ciss
Coss
100
175 °C
25 °C
175°C 98%
100
Crss
25°C 98%
10
10
0
Rev. 1.6
5
10
15
20
25
30
V DS [V]
1
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2006-05-11
Share Link: 