IRFP4242PBF 查看數據表（PDF） - International Rectifier
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IRFP4242PBF Datasheet PDF : 8 Pages
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PD - 96966A
PDP MOSFET
IRFP4242PbF
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain &
Energy Recovery applications
l Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
300
V
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
360
V
49
m:
IRP max @ TC= 100°C
93
A
TJ max
175
°C
D
D
G
S
S
D
G
TO-247AC
G
D
S
Description
G ate
D rain
Source
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
g Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
f Junction-to-Case
Max.
±30
46
33
190
93
430
210
2.9
-40 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
Max.
0.35
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes through
are on page 8
www.irf.com
1
7/25/05
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