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HM62W16255HC 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
HM62W16255HC
4M High Speed SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
HM62W16255HC Datasheet PDF : 18 Pages
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HM62W16255HC Series
Operation Table
CS OE WE LB
H
×××
L HH
×
L L HL
L L HL
L L HH
L L HH
L
×
L L
L
×
LL
L
×
LH
L
×
LH
Note:
×
: H or L
UB
Mode
V
CC
current
×
Standby
I
SB
, I
SB1
×
Output disable I
CC
L Read
I
CC
H Lower byte read I
CC
L Upper byte read I
CC
H—
I
CC
L Write
I
CC
H Lower byte write I
CC
L Upper byte write I
CC
H—
I
CC
I/O1–I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9–I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
—
—
Read cycle
Read cycle
Read cycle
—
Write cycle
Write cycle
Write cycle
—
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
V
CC
V
T
P
T
Topr
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
0 to +70
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Tbias
–10 to +85
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
6 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns
Unit
V
V
W
°
C
°
C
°
C
5
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