IS25LQ080 查看數據表（PDF） - Integrated Silicon Solution

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IS25LQ080

8 Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface

Integrated Silicon Solution 

IS25LQ080

PROGRAM/ERASE PERFORMANCE

Parameter

Unit Typ Max Remarks

Sector Erase Time

ms 50 150 From writing erase command to erase completion

Block Erase Time (64KB) ms 500 2000 From writing erase command to erase completion

Chip Erase Time (8Mb) s 2 5

From writing erase command to erase completion

Page Programming Time ms 0.5 0.7 From writing program command to program completion

Byte Program

us 10

Note: These parameters are characterized and are not 100% tested.

RELIABILITY CHARACTERISTICS

Parameter

Endurance

Data Retention

ESD – Human Body Model

ESD – Machine Model

Latch-Up

Min

Typ Unit Test Method

100,000

Cycles JEDEC Standard A117

20

Years JEDEC Standard A103

2,000

Volts JEDEC Standard A114

200

Volts JEDEC Standard A115

100 + ICC1

mA JEDEC Standard 78

Note: These parameters are characterized and are not 100% tested.

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

10/18/2012

41

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