IXFR10N100F 查看數據表（PDF） - IXYS CORPORATION
零件编号
产品描述 (功能)
生产厂家
IXFR10N100F
IXYS CORPORATION
IXFR10N100F Datasheet PDF : 2 Pages
| |||
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT
Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 2 Ω (External)
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
8 12
S
2700
pF
305
pF
93
pF
12
ns
9.8
ns
31
ns
12
ns
77
nC
16
nC
42
nC
0.50 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
trr
QRM
IF = 25 A,-di/dt = 100 A/µs, VR = 100 V
IRM
12 A
48 A
1.5 V
250 ns
0.8
µC
7
A
IXFR 10N100F
IXFR 12N100F
PLUS 247TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current: IXFR10N100
IXFR12N100
IT = 5A
IT = 6A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
Share Link: