K7R161884B 查看數據表（PDF） - Samsung

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K7R161884B

18Mb QDRII SRAM Specification 165FBGA with Pb & Pb-Free

Samsung 

K7R163684B

K7R161884B

512Kx36 & 1Mx18 QDRTM II b4 SRAM

PIN CAPACITANCE

PRMETER

Address Control Input Capacitance

Input and Output Capacitance

Clock Capacitance

SYMBOL

CIN

COUT

CCLK

Note: 1. Parameters are tested with RQ=250Ω and VDDQ=1.5V.

2. Periodically sampled and not 100% tested.

TESTCONDITION

VIN=0V

VOUT=0V

-

TYP

MAX

Unit NOTES

4

5

pF

6

7

pF

5

6

pF

THERMAL RESISTANCE

PRMETER

SYMBOL

TYP

Unit

NOTES

Junction to Ambient

θJA

17.1

°C/W

Junction to Case

θJC

3.3

°C/W

Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site

thermal impedance. TJ=TA + PD x θJA

APPLICATION INFORMATION

SRAM#1

ZQ R=250Ω

CQ

SRAM#4

R=250Ω

ZZQQ

CQ

CQ

CQ

Vt

D

Q

R

SA R W BW0 BW1 C C K K

D

Q

SA RW BW0 BW1 C C K K

Data In

Data Out

Address

R

W

BW

MEMORY

CONTROLLER

Return CLK

Source CLK

Return CLK

Source CLK

Vt

Vt

R=50Ω Vt=VREF

Vt

Vt

R

SRAM1 Input CQ

SRAM1 Input CQ

SRAM4 Input CQ

SRAM4 Input CQ

Rev. 5.0 July 2006

- 13 -

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