KA5M0765RQC
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-source breakdown voltage
Symbol
BVDSS
Zero gate voltage drain current
IDSS
Static drain-source on resistance (note)
Forward transconductance (note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=3.5A
VDS=50V, ID=3.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=7.0A,
VDS=0.8BVDSS
Min. Typ. Max. Unit
650 -
-
V
-
-
50 µA
-
- 200 µA
- 1.25 1.6 Ω
3.0
-
-
S
- 1120 -
- 125 -
pF
-
25
-
-
25 60
-
70 150
nS
- 105 220
-
65 140
-
38 50
-
6.5
-
nC
-
18
-
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
S = -1--
R
3