KSC5302DI 查看數據表（PDF） - Fairchild Semiconductor
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KSC5302DI Datasheet PDF : 6 Pages
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KSC5302DI
High Voltage & High Speed
Power Switch Application
• Built-in Free-wheeling Diode makes efficient anti saturation operation
Suitable for half-bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time B
spread even though corner spirit
• Low base drive requirement
Equivalent Circuit
C
1
I-PAK
1. Base 2. Collector 3. Emitter
E
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja
Junction to Ambient
Value
800
400
12
2
5
1
2
25
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Rating
5.0
83.3
Unit
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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