LH28F400SUN-NC80 查看數據表（PDF） - Sharp Electronics

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LH28F400SUN-NC80

4M (512K × 8, 256K × 16) Flash Memory

Sharp Electronics 

4M (512K × 8, 256K × 16) Flash Memory

LH28F400SU-NC

START

READ COMPATIBLE

STATUS REGISTER

CSR.7 = 0

1

WRITE 57H

WRITE CONFIRM

DATA/ADDRESS

READ COMPATIBLE

STATUS REGISTER

CSR.7 = 0

1

CSR.4, 5 = 1 (NOTE)

0

OPERATION

COMPLETE

BUS

OPERATION

COMMAND

COMMENTS

Read

Check CSR.7

1 = WSM Ready

0 = WSM Busy

Write

Write

Set

D = 57H

Write Protect A = X

Set Confirm

D = D0H

A = 0FFH

(A9 - A8 = 0, A7 - A0 = 1,

Others = X)

Read

Read

Check CSR.7

1 = WSM Ready

0 = WSM Busy

Check CSR.4, 5

1 = Unsuccesful

0 = Successful

NOTE:

If CSR.4, 5 is set, as it is command sequence error,

should be cleared before further attempts are initiated.

Upon device power-up or toggle RP, Set Write

Protect command must be written to reflect the actual

lock-bit status.

Write FFH after the last operation to reset device to

Read Array Mode.

See Command Bus Cycle notes for description of codes.

Figure 13. Set Write Protect

28F400SUT-NC60-11

17

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