IXTK33N50 查看數據表（PDF） - IXYS CORPORATION
零件编号
产品描述 (功能)
生产厂家
IXTK33N50 Datasheet PDF : 4 Pages
| |||
IXTK 33N50
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic values
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
24
S
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4900
pF
690
pF
300
pF
t
d(on)
t
r
td(off)
tf
53
ns
V = 10 V, V = 0.5 V , I = 0.5 I
GS
DS
DSS D
D25
30
ns
RG = 1 Ω (External)
140
ns
40
ns
Qg(on)
Q
gs
Q
gd
250
nC
V = 10 V, V = 0.5 V , I = 0.5 I
GS
DS
DSS D
D25
30
nC
115
nC
RthJC
RthCK
0.30 K/W
0.15
K/W
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
I
V =0V
S
GS
I
Repetitive; pulse width limited by T
SM
JM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
33 A
132 A
1.5 V
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
850
ns
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c
0.53 0.83
D 25.91 26.16
E 19.81 19.96
e
5.46 BSC
J
0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
Share Link: 