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LTC1753CSW 查看數據表(PDF) - Linear Technology

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LTC1753CSW Datasheet PDF : 24 Pages
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LTC1753
APPLICATIO S I FOR ATIO
The RDS(ON) required for a given conduction loss can now
be calculated by rearranging the relation P = I2R.
( ) ( ) RDS ON Q1 =
( ) ( ) PMAX Q1
=
VIN
PMAX
Q1

2
2
[ ( )]( ) ( )( ) DC Q1 IMAX
VOUT IMAX
( ) ( ) RDS ON Q2 =
( ) PMAX Q2
=
2
( ) VIN
PMAX
Q2

2
[ ( )]( ) ( )( ) DC Q2 IMAX
VIN VOUT IMAX
PMAX should be calculated based primarily on required
efficiency or allowable thermal dissipation. A typical high
efficiency circuit designed with a 5V input and a 2.8V,
11.2A output might allow no more than 4% efficiency loss
at full load for each MOSFET. Assuming roughly 90%
efficiency at this current level, this gives a PMAX value of:
[(2.8)(11.2A/0.9)(0.04)] = 1.39W per FET
and a required RDS(ON) of:
(5V)(1.39W)
( )( ) ( ) RDS ON Q1 =
= 0.019
2
2.8V 11.2A
(5V)(1.39W)
( )( ) ( ) RDS ON Q2 =
= 0.025
2
5V 2.8V 11.2A
Note also that while the required RDS(ON) values suggest
large MOSFETs, the dissipation numbers are only 1.39W
per device or less––large TO-220 packages and heat sinks
are not necessarily required in high efficiency applica-
tions. Siliconix Si4410DY or International Rectifier IRF7413
(both in SO-8) or Siliconix SUD50N03 or Motorola
MTD20N03HDL (both in D PAK) are small footprint sur-
face mount devices with RDS(ON) values below 0.03at 5V
of gate drive that work well in LTC1753 circuits. With
higher output voltages, the RDS(ON) of Q1 may need to be
significantly lower than that for Q2. These conditions can
often be met by paralleling two MOSFETs for Q1 and using
a single device for Q2. Note that using a higher PMAX value
Table 4. Recommended MOSFETs for LTC1753 Applications
PARTS
Siliconix SUD50N03-10
D-PAK
Siliconix Si4410DY
SO-8
ON Semiconductor MTD20N03HDL
D PAK
Fairchild FDS6670A
SO-8
Fairchild FDS6680
SO-8
ON Semiconductor MTB75N03HDL
DD PAK
IR IRL3103S
DD PAK
IR IRLZ44
TO-220
Fuji 2SK1388
TO-220
RDS(ON)
AT 25°C (m)
19
20
35
8
10
7.5
14
28
37
RATED CURRENT (A)
15 at 25°C
10 at 100°C
10 at 25°C
8 at 75°C
20 at 25°C
16 at 100°C
13 at 25°C
11.5 at 25°C
75 at 25°C
59 at 100°C
56 at 25°C
40 at 100°C
50 at 25°C
36 at 100°C
35 at 25°C
Note: Please refer to the manufacturer’s data sheet for testing conditions
and detail information.
TYPICAL INPUT
CAPACITANCE
CISS (pF)
3200
2700
880
3200
2070
4025
1600
3300
1750
θJC (°C/W)
1.8
1.67
25
25
1.0
1.8
1.0
2.08
TJMAX (°C)
175
150
150
150
150
150
175
175
150
14

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