HYB514800BJ-60 查看數據表（PDF） - Infineon Technologies

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产品描述 (功能)

生产厂家

HYB514800BJ-60

512kx8-Bit Dynamic RAM

Infineon Technologies 

HYB 514800BJ -60/-70/-80

512k x 8 DRAM

V

RAS

IH

VIL

V

IH

CAS

VIL

V

IH

A0 - A9 VIL

V

IH

WRITE

VIL

V

IH

OE

VIL

I/O1-I/O8

V

IH

(Inputs) VIL

I/O1-I/O8

V

OH

(Outputs) VOL

tRC

tRAS

tRP

tRCD

tCSH

tRSH

tCAS

tASR

tRAD

tASC

tRAL

tCAH

Row

Address

tRAH

Column

Address

tCWL

tRWL

tWP

tCRP

tASR

.

Row

Address

tOEH

tDZO

tDZC

tODD

tDS tDH

tOEZ

tCLZ

tOEA

Hi-Z

Valid Data

Hi-Z

“H” or “L”

Write Cycle (OE Controlled Write)

Semiconductor Group

137

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