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M28W800BB90N1T 查看數據表(PDF) - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
M28W800BB90N1T
8 Mbit (512Kb x16, Boot Block) 3V Supply Flash Memory
STMicroelectronics
M28W800BB90N1T Datasheet PDF : 42 Pages
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M28W800BT, M28W800BB
Table 6. Program, Erase Times and Program/Erase Endurance Cycles
Parameter
Test Conditions
M28W800B
Min
Typ
Max
Word Program
V
PP
= V
DD
10
200
Double Word Program
V
PP
= 12V ±5%
10
200
Main Block Program
V
PP
= 12V ±5%
V
PP
= V
DD
0.16
5
0.32
5
Parameter Block Program
V
PP
= 12V ±5%
V
PP
= V
DD
0.02
4
0.04
4
Main Block Erase
V
PP
= 12V ±5%
V
PP
= V
DD
1
10
1
10
Parameter Block Erase
V
PP
= 12V ±5%
V
PP
= V
DD
0.8
10
0.8
10
Program/Erase Cycles (per Block)
100,000
Unit
µs
µs
s
s
s
s
s
s
s
s
cycles
14/42
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